Epitaxy - GaN
Patent issue with Boston Univ.’s method of growth GaN epitaxy on a buffer layer:
The advantages of using silicon substrates are large diameter (8-inch) and low cost (less than $1/cm2). The researchers estimate the cost of 4-inch silicon carbide substrates at ~$5/cm2, while 2-inch GaN-on-GaN wafers cost ~$50/cm2.
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