| EPC | | Yes | | mainly for LIDAR in car autopilot (customer Velodyne) | | |
| GaN Power | | | | | |
| Transphorm | | | | UCSB technologies, fabrication by | | |
| Navitas | | | | | | |
| Wolfspeed | | | GaN-on-SiC
Foundry | | |
| United Monolithic Semiconductors (UMS) | | | Foundry | | |
| OMMIC | | | Foundry, France | | |
| Macom | | | from nitronex | | |
| GaN Systems | | | | Fabrication at TSMC | | |
| Infenion (IR) | | | | | | |
| Macom | | | | Growth of GaN-on-Si wafers. Device fabrication by GCS | | |
| Qorvo | | | leading GaN device company, GaN-on-SiC | | |
| EpiGaN | | Belgium, Europe | GaN-on-Si and GaN-on-SiC epitaxial wafers | | |
| ExaGaN | | | France | GaN devices | | |
| Sumitomo Electric | 2.7 GHZ, 3.6GHz | | Cree and Sumitomo are the two major GaN HEMTs producers to Hua Wei basestations | | |
| Dialog | | | Germany | | | |
| ST Microelectronics | ST Microelectronics | yes | Europe | ST makes RF for MaCom, but power for itself. | | |
| Power Integrations Inc. | | | | | | |
| NXP | | | | | | |
| RFHIC | | | S. Korea | | | |
| Ampleon | | | The Netherlands | | | |