Si
Introduction
- The Trench Power MOSFET: Part I Part II (2017)
- Power MOSFET Basics (Infineon)
- Power MOSFET Basics (AOS, first and third quadrant operation explained)
- Basic knowledge of IGBT 1 (Wiki)
- Basic Knowledge of IGBT 2 (Baidu)
- Basic Knowledge of IGBT 3 (Slide show with clear circuits and structures ) 国内封闭此网点，点击这儿
- Basic Knowledge of IGBT 4 (微信）
- Cross section of a typical IGBT showing internal connection of MOSFET and bipolar transistor
- IGBT Datasheet Tutorial
- Dynamic tecting of IGBT
- 1200V HighSpeed 3 IGBT (Infineon 2013)
- Comparison between IGBT, GaN HEMTs, and SiC SBD and MOSFETs 1 (Device structures and signs)
- Comparison between IGBT, GaN HEMTs, and SiC SBD and MOSFETs 2 (SiC over Si IGBT)
- Comparison between IGBT, GaN HEMTs, and SiC SBD and MOSFETs 3 (Major parameters)
- Comparison between IGBT, GaN HEMTs, and SiC SBD and MOSFETs 4 (Applications Chart)
- IGBT Technology Review (Fuji Electric 2014, including loss/efficiency as a function of frequency)
- Introduction to IPM 1 (Mitsubishi ) 2 (OnSemi)
- Flip-Chip Packaging (Wiki)
- Use of IGBTs with drivers
- IGBT packaging module design using Ansoft (circuits, layout, 3-D view etc.)
Materials
- Epitaxial silicon and Si1-xGex (MKS Equipment)
SOI Substrate Makers
Si Photodetectors and Si Photonics
IGBT Chip Makers
- ABB
- AOS
- 宁波达新半导体有限公司, CEO 陈智勇
- China’s first IGBT production line (2014) 中国南车株洲所. Director of the Institute: 总经理丁荣军
- China Resources Microelectronics （无锡华润微晶）
- Fuji
- Hitachi
- 江苏中科君芯科技有限公司
- Infineon Chips Infineon Manufacturing Presentation Popular 600V FRD SPW47N60CFD
- as compared to normal diode SPW47N60C3
- Korean Electronic Company
- Mitsubishi Electric Semiconductor
- OnSemi
- Semikron
- 上海贝岭股份有限公司
- SMC (PFC)
Chip Design, Processing and Fabrication
- Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs 2011
- Junction termination extension (JTE) with variation lateral doping (VLD) optimization method (2011)
- 1200V PT IGBT with Improved Short-Circuit Immunity (2000)
- 1200V IGBT Info (epi spec) (2006)
Foundry Service in China for 1-4 micron analog devices (6- inch): Diodes Inc.
IC, IGBT Packaging and Modules Companies
- Alpha and Omega Semiconductor
- Fujitsu Electric
- Hana Group
- OnSemi
- SemiKron AG
- FlipChip.com (flip chip process and foundry)
- Ansys (Ansoft )
Testing Equipment
- Mentor (Power Tester 1500A) reliability equipment
- Module Teser
IGBT End Users
1. Inverters
2. PFC
3. Air Conditioners
- Air conditioner electronics (On Semiconductor)
- Power Supply for Air conditioners (Renesas)
- Kyocera PIM for air conditioners
- Mitsubishi Electric
- IPMs used in the compressors
Market Analysis
Research Institutes
- IMEC (Belgium)
- CAE-Leti (France)
- ITRI (Taiwan, Republic of China)
- SUNY (USA)
- Institute of Microelectronics, Chinese Academy of Sciences
- Technical University of Denmark (packaging and modules)
Sales Agents
- Powerex (sales for Mitsubishi in America)